Today’s semiconductors have the drawback of having a voltage hold off and electric current conduction limits. The materials the semiconductors are made of cause this limitation; therefore, newer semiconducting materials (normally WBG semiconductors) with intrinsic material parameters that are better suited for higher voltage and current levels are being tested. One of the many tests being performed is material parameter extraction and the disclosed invention is a new system to accomplish this.
This technology is a single piece of equipment that performs a wide injection range OCVD on pn junction devices. Then a unique software algorithm was written to extract the carrier lifetime from the data without any subtraction and makes the process more transparent.
This technology can be used to perform Injection Dependent Lifetime Spectroscopy (IDLS) and, with the use of a thermal chamber, also performs a Temperature-Injection Dependent Lifetime Spectroscopy (T-IDLS).
Reference Number: D-1353
Features, Benefits, & Advantages:
More galvanic disconnect of junction
Very wide current injection range
Allows Injection Dependent Lifetime Spectroscopy (IDLS) to be performed
Designed for low resistance
A US provisional patent, serial number 62577888, was filed on 11/15/17.
Development Stage: The invention has been reduced to practice and prototype has been tested and verified.
Shelby Lacouture, Electrical Engineering, Texas Tech University, Lubbock, Texas
Stephen Bayne, Electrical Engineering, Texas Tech University, Lubbock, Texas
Keywords: semiconductor manufacturing, carrier lifetime, open circuit voltage decay