Wide-Injection Range Open Circuit Voltage Decay System

Technology #d-1353

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Shelby Lacouture
Electrical Engineering, Texas Tech University, Lubbock, Texas
Stephen Bayne
Electrical Engineering, Texas Tech University, Lubbock, Texas
Managed By
Cameron Smith
Licensing Associate 806-834-6822
Patent Protection

Provisional Patent Application Filed

Today’s semiconductors have the drawback of having a voltage hold off and electric current conduction limits. The materials the semiconductors are made of cause this limitation; therefore, newer semiconducting materials (normally WBG semiconductors) with intrinsic material parameters that are better suited for higher voltage and current levels are being tested. One of the many tests being performed is material parameter extraction and the disclosed invention is a new system to accomplish this.  

This technology is a single piece of equipment that performs a wide injection range OCVD on pn junction devices. Then a unique software algorithm was written to extract the carrier lifetime from the data without any subtraction and makes the process more transparent. 

This technology can be used to perform Injection Dependent Lifetime Spectroscopy (IDLS) and, with the use of a thermal chamber, also performs a Temperature-Injection Dependent Lifetime Spectroscopy (T-IDLS).  

Reference Number: D-1353 

Market Applications: 

  • Semiconductor manufacturing 

Features, Benefits, & Advantages: 

  • Single unit
  • More galvanic disconnect of junction
  • Very wide current injection range
  • Allows Injection Dependent Lifetime Spectroscopy (IDLS) to be performed
  • Designed for low resistance
  • More objective 

Intellectual Property: 

  • A US provisional patent, serial number 62577888, was filed on 11/15/17. 

Development Stage: The invention has been reduced to practice and prototype has been tested and verified. 


  • Shelby Lacouture, Electrical Engineering, Texas Tech University, Lubbock, Texas
  • Stephen Bayne, Electrical Engineering, Texas Tech University, Lubbock, Texas 

Keywords: semiconductor manufacturing, carrier lifetime, open circuit voltage decay